Invention Grant
- Patent Title: Formation of gate dielectrics with uniform nitrogen distribution
- Patent Title (中): 形成具有均匀氮分布的栅极电介质
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Application No.: US13236121Application Date: 2011-09-19
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Publication No.: US08492291B2Publication Date: 2013-07-23
- Inventor: Hiroaki Niimi , Reima T. Laaksonen
- Applicant: Hiroaki Niimi , Reima T. Laaksonen
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Warren L. Franz; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
The present invention provides a method for manufacturing a gate dielectric (710) that includes providing a nitrided dielectric layer (220) over a substrate (120). The nitrided dielectric layer (220) has a nonuniform concentration of nitrogen in a bulk thereof. The nitrided dielectric layer (220) is exposed to oxygen radicals (410), resulting in a reduction of the non-uniformity.
Public/Granted literature
- US20120149186A1 FORMATION OF GATE DIELECTRICS WITH UNIFORM NITROGEN DISTRIBUTION Public/Granted day:2012-06-14
Information query
IPC分类:
