Invention Grant
- Patent Title: Transistor including multi-layer reentrant profile
- Patent Title (中): 晶体管包括多层折入型材
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Application No.: US12986241Application Date: 2011-01-07
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Publication No.: US08492769B2Publication Date: 2013-07-23
- Inventor: Lee W. Tutt , Shelby F. Nelson
- Applicant: Lee W. Tutt , Shelby F. Nelson
- Applicant Address: US NY Rochester
- Assignee: Eastman Kodak Company
- Current Assignee: Eastman Kodak Company
- Current Assignee Address: US NY Rochester
- Agent William R. Zimmerli
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
A transistor includes a substrate. A first electrically conductive material layer is positioned on the substrate. A second electrically conductive material layer is in contact with and positioned on the first electrically conductive material layer. A third electrically conductive material layer is in contact with and positioned on the second electrically conductive material layer. The third electrically conductive material layer overhangs the second electrically conductive material layer.
Public/Granted literature
- US20120175614A1 TRANSISTOR INCLUDING MULTI-LAYER REENTRANT PROFILE Public/Granted day:2012-07-12
Information query
IPC分类:
