Invention Grant
- Patent Title: Semiconductor device and method for producing the same, and power supply
- Patent Title (中): 半导体装置及其制造方法及电源
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Application No.: US13331090Application Date: 2011-12-20
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Publication No.: US08492784B2Publication Date: 2013-07-23
- Inventor: Keishiro Okamoto , Tadahiro Imada , Nobuhiro Imaizumi , Keiji Watanabe
- Applicant: Keishiro Okamoto , Tadahiro Imada , Nobuhiro Imaizumi , Keiji Watanabe
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Kratz, Quintos & Hanson, LLP
- Priority: JP2011-26232 20110209
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
A semiconductor device includes: a semiconductor chip including a nitride semiconductor layered structure including a carrier transit layer and a carrier supply layer; a first resin layer on the semiconductor chip, the first resin layer including a coupling agent; a second resin layer on the first resin layer, the second resin layer including a surfactant; and a sealing resin layer to seal the semiconductor chip with the first resin layer and the second resin layer.
Public/Granted literature
- US20120199991A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME, AND POWER SUPPLY Public/Granted day:2012-08-09
Information query
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