A semiconductor device and a method for forming the same are disclosed. The semiconductor device includes a semiconductor substrate including a cell region and a peripheral circuit region, and an active region defined by a device isolation film, at least one dummy gate formed over the active region to expose a center part and both ends of the active region, a bit line contact plug formed between the dummy gates so as to be coupled to the center part of the active region, and a storage node contact plug that is spaced apart from the bit line contact plug by the dummy gate and is coupled to both ends of the active region. As a result, the problem that the storage node contact hole is not open in the semiconductor device can be solved, resulting in improved semiconductor device characteristics.