Invention Grant
- Patent Title: Method of manufacturing LC circuit and LC circuit
- Patent Title (中): 制造LC电路和LC电路的方法
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Application No.: US12659446Application Date: 2010-03-09
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Publication No.: US08492822B2Publication Date: 2013-07-23
- Inventor: Jin-Sung Lim , Chul-Ho Chung
- Applicant: Jin-Sung Lim , Chul-Ho Chung
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2009-0020831 20090311
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/94

Abstract:
A method for manufacturing an LC circuit, including forming a first conductive layer pattern serving as a lower electrode of a capacitor on a first interlayer insulating layer, forming a dielectric layer pattern storing electric charges on the first conductive layer pattern, forming a second conductive layer pattern serving as an upper electrode of the capacitor on the dielectric layer pattern, forming a second interlayer insulating layer on the second conductive layer pattern, forming a contact via exposing one of the first or second conductive layer pattern in the second interlayer insulating layer, and filling the contact via with a contact plug, and forming a third conductive layer pattern on the second interlayer insulating layer having the contact plug, wherein the third conductive layer pattern is electrically connected to the contact plug, and is etched in a metal interconnection type layer and functions as an inductor.
Public/Granted literature
- US20100230381A1 Method of manufacturing LC circuit and LC circuit Public/Granted day:2010-09-16
Information query
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