Invention Grant
- Patent Title: Same-chip multicharacteristic semiconductor structures
- Patent Title (中): 同芯片多特征半导体结构
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Application No.: US12861976Application Date: 2010-08-24
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Publication No.: US08492839B2Publication Date: 2013-07-23
- Inventor: Bruce B. Doris , Kangguo Cheng , Ali Khakifirooz , Pranita Kulkarni , Ghavam G. Shahidi
- Applicant: Bruce B. Doris , Kangguo Cheng , Ali Khakifirooz , Pranita Kulkarni , Ghavam G. Shahidi
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Harrington & Smith
- Agent Louis J. Percello
- Main IPC: H01L27/12
- IPC: H01L27/12

Abstract:
In one exemplary embodiment, a semiconductor structure includes: a semiconductor-on-insulator substrate with a top semiconductor layer overlying an insulation layer and the insulation layer overlies a bottom substrate layer; at least one first device at least partially overlying and disposed upon a first portion of the top semiconductor layer, where the first portion has a first thickness, a first width and a first depth; and at least one second device at least partially overlying and disposed upon a second portion of the top semiconductor layer, where the second portion has a second thickness, a second width and a second depth, where at least one of the following holds: the first thickness is greater than the second thickness, the first width is greater than the second width and the first depth is greater than the second depth.
Public/Granted literature
- US20120049284A1 Same-Chip Multicharacteristic Semiconductor Structures Public/Granted day:2012-03-01
Information query
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