Invention Grant
- Patent Title: Application of cluster beam implantation for fabricating threshold voltage adjusted FETs
- Patent Title (中): 应用聚束束注入制造阈值电压调节FET
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Application No.: US13432716Application Date: 2012-03-28
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Publication No.: US08492848B2Publication Date: 2013-07-23
- Inventor: Oleg Gluschenkov , Dae-Gyu Park , Haizhou Yin
- Applicant: Oleg Gluschenkov , Dae-Gyu Park , Haizhou Yin
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Joseph P. Abate, Esq.
- Main IPC: H01L21/70
- IPC: H01L21/70
Abstract:
Semiconductor structures including a high k gate dielectric material that has at least one surface threshold voltage adjusting region located within 3 nm or less from an upper surface of the high k gate dielectric are provided. The at least one surface threshold voltage adjusting region is formed by a cluster beam implant step in which at least one threshold voltage adjusting impurity is formed directly within the high k gate dielectric or driven in from an overlying threshold voltage adjusting material which is subsequently removed from the structure following the cluster beam implant step.
Public/Granted literature
- US20120187502A1 APPLICATION OF CLUSTER BEAM IMPLANTATION FOR FABRICATING THRESHOLD VOLTAGE ADJUSTED FETS Public/Granted day:2012-07-26
Information query
IPC分类:
