Invention Grant
US08492875B2 Nonvolatile memory element having a tantalum oxide variable resistance layer
有权
具有氧化钽可变电阻层的非易失性存储元件
- Patent Title: Nonvolatile memory element having a tantalum oxide variable resistance layer
- Patent Title (中): 具有氧化钽可变电阻层的非易失性存储元件
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Application No.: US13483808Application Date: 2012-05-30
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Publication No.: US08492875B2Publication Date: 2013-07-23
- Inventor: Koichi Osano , Satoru Fujii , Shunsaku Muraoka
- Applicant: Koichi Osano , Satoru Fujii , Shunsaku Muraoka
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2007-086514 20070329
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
A nonvolatile memory apparatus includes a first electrode, a second electrode, a variable resistance layer, a resistance value of the variable resistance layer reversibly varying between a plurality of resistance states based on an electric signal applied between the electrodes. The variable resistance layer includes at least a tantalum oxide, and is configured to satisfy 0
Public/Granted literature
- US20120235111A1 NONVOLATILE MEMORY ELEMENT HAVING A TANTALUM OXIDE VARIABLE RESISTANCE LAYER Public/Granted day:2012-09-20
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