Invention Grant
US08492877B2 Semiconductor structure with smoothed surface and process for obtaining such a structure
有权
具有平滑表面的半导体结构和用于获得这种结构的工艺
- Patent Title: Semiconductor structure with smoothed surface and process for obtaining such a structure
- Patent Title (中): 具有平滑表面的半导体结构和用于获得这种结构的工艺
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Application No.: US13349263Application Date: 2012-01-12
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Publication No.: US08492877B2Publication Date: 2013-07-23
- Inventor: Michel Bruel
- Applicant: Michel Bruel
- Applicant Address: FR Bernin
- Assignee: Soitec
- Current Assignee: Soitec
- Current Assignee Address: FR Bernin
- Agency: Winston & Strawn LLP
- Priority: FR1150935 20110204
- Main IPC: H01L29/30
- IPC: H01L29/30
Abstract:
The present invention relates to a process for smoothing the surface of a semiconductor wafer by fusion. The process includes defining a reference length which dimensions wafer surface roughness that is to be reduced or removed, and scanning the surface with a fusion beam while adjusting parameters of the fusion beam so as to fuse, during the scanning of the surface, a local surface zone of the wafer whose length is greater than or equal to the reference length, with the scanning continued to smooth the entire surface of the wafer by eliminating surface roughnesses of period lower than the reference length. The present invention also relates to a semiconductor wafer having a surface layer made of a semiconducting material that is smoothed by the process and that does not exhibit any roughness of period lower than the reference length.
Public/Granted literature
- US20120199953A1 SEMICONDUCTOR STRUCTURE WITH SMOOTHED SURFACE AND PROCESS FOR OBTAINING SUCH A STRUCTURE Public/Granted day:2012-08-09
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