Invention Grant
US08492880B2 Multilayered low k cap with conformal gap fill and UV stable compressive stress properties
有权
具有适形间隙填充和UV稳定压应力性能的多层低k盖
- Patent Title: Multilayered low k cap with conformal gap fill and UV stable compressive stress properties
- Patent Title (中): 具有适形间隙填充和UV稳定压应力性能的多层低k盖
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Application No.: US13078305Application Date: 2011-04-01
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Publication No.: US08492880B2Publication Date: 2013-07-23
- Inventor: Mihaela Balseanu , Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, Jr. , Son V. Nguyen , Li-Qun Xia
- Applicant: Mihaela Balseanu , Stephan A. Cohen , Alfred Grill , Thomas J. Haigh, Jr. , Son V. Nguyen , Li-Qun Xia
- Applicant Address: US NY Armonk US CA Santa Clara
- Assignee: International Business Machines Corporation,Applied Materials, Inc.
- Current Assignee: International Business Machines Corporation,Applied Materials, Inc.
- Current Assignee Address: US NY Armonk US CA Santa Clara
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Louis J. Percello, Esq.
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L21/469
Abstract:
The present disclosure provides a multilayered cap (i.e., migration barrier) that conforms to the substrate (i.e., interconnect structure) below. The multilayered cap, which can be located atop at least one interconnect level of an interconnect structure, includes, from bottom to top, a first layer comprising silicon nitride and a second layer comprising at least one of boron nitride and carbon boron nitride.
Public/Granted literature
- US20120248617A1 MULTILAYERED LOW k CAP WITH CONFORMAL GAP FILL AND UV STABLE COMPRESSIVE STRESS PROPERTIES Public/Granted day:2012-10-04
Information query
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