Invention Grant
- Patent Title: Cu pillar bump with electrolytic metal sidewall protection
- Patent Title (中): 铜柱凸起与电解金属侧壁保护
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Application No.: US12765250Application Date: 2010-04-22
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Publication No.: US08492891B2Publication Date: 2013-07-23
- Inventor: Wen-Hsiung Lu , Ming-Da Cheng , Chih-Wei Lin , Jacky Chang , Chung-Shi Liu , Chen-Hua Yu
- Applicant: Wen-Hsiung Lu , Ming-Da Cheng , Chih-Wei Lin , Jacky Chang , Chung-Shi Liu , Chen-Hua Yu
- Applicant Address: TW
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A copper pillar bump has a sidewall protection layer formed of an electrolytic metal layer. The electrolytic metal layer is an electrolytic nickel layer, an electrolytic gold layer, and electrolytic copper layer, or an electrolytic silver layer.
Public/Granted literature
- US20110260317A1 CU PILLAR BUMP WITH ELECTROLYTIC METAL SIDEWALL PROTECTION Public/Granted day:2011-10-27
Information query
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