Invention Grant
- Patent Title: Semiconductor device capable of preventing dielectric layer from cracking
- Patent Title (中): 能够防止电介质层破裂的半导体装置
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Application No.: US13049647Application Date: 2011-03-16
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Publication No.: US08492893B1Publication Date: 2013-07-23
- Inventor: Eun Sook Sohn , Jin Young Kim , Tae Kyung Hwang
- Applicant: Eun Sook Sohn , Jin Young Kim , Tae Kyung Hwang
- Applicant Address: US AZ Chandler
- Assignee: Amkor Technology, Inc.
- Current Assignee: Amkor Technology, Inc.
- Current Assignee Address: US AZ Chandler
- Agency: McKay and Hodgson, LLP
- Agent Serge J. Hodgson
- Main IPC: H01L23/12
- IPC: H01L23/12 ; H01L23/48

Abstract:
A semiconductor device is disclosed. A conductive pillar for electrically connecting a semiconductor die to a circuit board may be gradually slimmed from the semiconductor die to the circuit board. A dummy conductive layer may be disposed between the semiconductor die and the conductive pillar. A width of an opening for opening a pattern of the circuit board may range from about 50% to 90% of the width of the lower end of the conductive pillar. Accordingly, a mechanical stress is prevented from being transmitted from the conductive pillar to the semiconductor die, or is absorbed by the dummy conductive layer, and thus, preventing cracks of the semiconductor die and a dielectric layer having a low dielectric constant.
Information query
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