Invention Grant
- Patent Title: Through silicon via direct FET signal gating
- Patent Title (中): 通过硅通过直接FET信号门控
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Application No.: US13171919Application Date: 2011-06-29
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Publication No.: US08492903B2Publication Date: 2013-07-23
- Inventor: Gerald K. Bartley , Philip R. Germann , David P. Paulsen , John E. Sheets, II
- Applicant: Gerald K. Bartley , Philip R. Germann , David P. Paulsen , John E. Sheets, II
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Jim Boice
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
A system comprises a first integrated circuit (IC) chip that includes a first electronic component; a second IC chip that includes a second electronic component; a through silicon via (TSV) in the second IC chip that electrically couples the first electronic component to the second electronic component; and a signal gating transistor that fully occludes the TSV.
Public/Granted literature
- US20130001676A1 THROUGH SILICON VIA DIRECT FET SIGNAL GATING Public/Granted day:2013-01-03
Information query
IPC分类:
