Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
- Patent Title (中): 半导体器件及其制造方法相同
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Application No.: US12762697Application Date: 2010-04-19
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Publication No.: US08492904B2Publication Date: 2013-07-23
- Inventor: Akira Fujihara
- Applicant: Akira Fujihara
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2009-106207 20090424
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L21/764 ; H01L23/535 ; H01L21/768
Abstract:
One aspect of the present invention is a semiconductor device including: a semiconductor substrate; a first wiring that is formed on the semiconductor substrate; a second wiring that is formed to cross over the first wiring with a space interposed therebetween at a cross portion in which the first wiring and the second wiring cross each other; a protective film that is formed on the semiconductor substrate to cover at least a part of the first wiring, the part being located under the second wiring in the cross portion; and an insulator film that is formed in an island shape on the protective film under the second wiring in the cross portion to be located between edges of the protective film and to cover the first wiring in the cross portion.
Public/Granted literature
- US20100270687A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2010-10-28
Information query
IPC分类:
