Invention Grant
- Patent Title: PSRR in a voltage reference circuit
- Patent Title (中): 电压参考电路中的PSRR
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Application No.: US13234766Application Date: 2011-09-16
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Publication No.: US08493137B2Publication Date: 2013-07-23
- Inventor: Marco Passerini , Francesco Mannino , Chiara Missiroli
- Applicant: Marco Passerini , Francesco Mannino , Chiara Missiroli
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Morrison & Foerster LLP
- Main IPC: G05F1/575
- IPC: G05F1/575 ; H02M3/16

Abstract:
Devices and circuits for voltage reference architectures that can increase the PSRR parameter by improving the saturation margin for an output transistor. For example, a device can include a current source coupled between a first power supply line and a circuit node, a voltage production circuit coupled between the circuit node and a second power supply line to produce a plurality of voltages respectively at voltage nodes thereof, a multiplexer coupled to the voltage nodes of the voltage production circuit and the output node and configured to select and output one of the voltages to the output node, and a control circuit configured to supply the one of the voltages to the circuit node.
Public/Granted literature
- US20130069715A1 PSRR IN A VOLTAGE REFERENCE CIRCUIT Public/Granted day:2013-03-21
Information query
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