Invention Grant
- Patent Title: Light-emitting device
- Patent Title (中): 发光装置
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Application No.: US13010118Application Date: 2011-01-20
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Publication No.: US08493295B2Publication Date: 2013-07-23
- Inventor: Shunpei Yamazaki , Jun Koyama , Mai Osada
- Applicant: Shunpei Yamazaki , Jun Koyama , Mai Osada
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2000-054963 20000229
- Main IPC: G09G3/30
- IPC: G09G3/30

Abstract:
There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is μ, a gate capacitance per unit area is Co, a maximum gate voltage is Vgs(max), a channel width is W a channel length is L, an average value of a threshold voltage is Vth, a deviation from the average value of the threshold voltage is ΔVth, and a difference in emission brightness of a plurality of EL elements is within a range of ±n %, a semiconductor display device is characterized in that A = 2 Id μ * C 0 A ( Vgs ( max ) - Vth ) 2 ≦ W L ≦ ( 1 + n 100 - 1 ) 2 * A Δ Vth 2 Δ Vth ≦ ( 1 + n 100 - 1 ) * A * L / W .
Public/Granted literature
- US20110109604A1 LIGHT-EMITTING DEVICE Public/Granted day:2011-05-12
Information query
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