Invention Grant
- Patent Title: Power semiconductor module and semiconductor power converter provided with the same
- Patent Title (中): 功率半导体模块与半导体功率转换器相同
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Application No.: US12647874Application Date: 2009-12-28
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Publication No.: US08493762B2Publication Date: 2013-07-23
- Inventor: Gou Ninomiya , Toshiharu Obu , Kazuhiro Ueda , Yoshiyuki Shimizu , Shinichi Baba
- Applicant: Gou Ninomiya , Toshiharu Obu , Kazuhiro Ueda , Yoshiyuki Shimizu , Shinichi Baba
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Main IPC: H02M7/5387
- IPC: H02M7/5387 ; H05K7/20

Abstract:
A power semiconductor module includes semiconductor elements of a first system constituting each of arms in a circuit of the first system, semiconductor elements of a second system constituting each of arms in a circuit of the second system, a plurality of DC electrode conductors including a common DC electrode conductor joined to the semiconductor elements of the first and second systems, and a plurality of AC electrode conductors joined to the respective semiconductor elements of the first and second systems. Each of the semiconductor elements of the first and second systems is interposed between the DC electrode conductor and AC electrode conductor.
Public/Granted literature
- US20110156797A1 POWER SEMICONDUCTOR MODULE AND SEMICONDUCTOR POWER CONVERTER PROVIDED WITH THE SAME Public/Granted day:2011-06-30
Information query
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