Invention Grant
US08493786B2 Semiconductor device for short-circuiting output terminals of two or more voltage generator circuits at read time and control method for the same
有权
用于在读取时间短路两个或更多个电压发生器电路的输出端的半导体器件及其控制方法
- Patent Title: Semiconductor device for short-circuiting output terminals of two or more voltage generator circuits at read time and control method for the same
- Patent Title (中): 用于在读取时间短路两个或更多个电压发生器电路的输出端的半导体器件及其控制方法
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Application No.: US12822587Application Date: 2010-06-24
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Publication No.: US08493786B2Publication Date: 2013-07-23
- Inventor: Takeshi Nakano , Mikio Ogawa
- Applicant: Takeshi Nakano , Mikio Ogawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-152642 20090626
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
According to one embodiment, a semiconductor device includes a first voltage generator, a second voltage generator, a first MOS transistor, and a controller. The first voltage generator outputs a first voltage to a first node. The second voltage generator outputs a second voltage to a second node. The first MOS transistor is capable of short-circuiting the first node and second node. The controller performs a control operation to short-circuit the first node and second node by turning on the first MOS transistor. The controller controls a period in which the first MOS transistor is kept in an on state based on time.
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