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US08493800B2 Three dimensional semiconductor storage device having write drivers under a three dimensional memory cell array 失效
具有三维存储单元阵列下的写驱动器的三维半导体存储装置

Three dimensional semiconductor storage device having write drivers under a three dimensional memory cell array
Abstract:
According to one embodiment, a semiconductor storage device includes a three-dimensional memory cell array, write drivers, and a program voltage control circuit. In the three-dimensional memory cell array, memory cells are three-dimensionally arranged. The write drivers are arranged to be distributed under the three-dimensional memory cell array and apply a program voltage to the memory cells during writing in the memory cells. The program voltage control circuit is arranged around the three-dimensional memory cell array and performs control for making the write drivers to generate the program voltage.
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