Invention Grant
- Patent Title: Three dimensional semiconductor storage device having write drivers under a three dimensional memory cell array
- Patent Title (中): 具有三维存储单元阵列下的写驱动器的三维半导体存储装置
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Application No.: US13021208Application Date: 2011-02-04
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Publication No.: US08493800B2Publication Date: 2013-07-23
- Inventor: Yuri Terada , Takahiko Sasaki
- Applicant: Yuri Terada , Takahiko Sasaki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-024243 20100205
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
According to one embodiment, a semiconductor storage device includes a three-dimensional memory cell array, write drivers, and a program voltage control circuit. In the three-dimensional memory cell array, memory cells are three-dimensionally arranged. The write drivers are arranged to be distributed under the three-dimensional memory cell array and apply a program voltage to the memory cells during writing in the memory cells. The program voltage control circuit is arranged around the three-dimensional memory cell array and performs control for making the write drivers to generate the program voltage.
Public/Granted literature
- US20110199838A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2011-08-18
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