Invention Grant
- Patent Title: Multi-beam semiconductor laser device
- Patent Title (中): 多光束半导体激光器件
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Application No.: US12750838Application Date: 2010-03-31
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Publication No.: US08494019B2Publication Date: 2013-07-23
- Inventor: Yoshihiko Iga , Hiroshi Moriya , Yutaka Inoue , Hideki Hara , Keiichi Miyauchi
- Applicant: Yoshihiko Iga , Hiroshi Moriya , Yutaka Inoue , Hideki Hara , Keiichi Miyauchi
- Applicant Address: JP Kanagawa
- Assignee: Oclaro Japan, Inc.
- Current Assignee: Oclaro Japan, Inc.
- Current Assignee Address: JP Kanagawa
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2009-090716 20090403
- Main IPC: H01S5/00
- IPC: H01S5/00

Abstract:
Within a semiconductor laser device, mounting a semiconductor laser element array of multi-beam structure on a sub-mount, the semiconductor laser element array of multi-beam structure comprises one piece of a semiconductor substrate 11; a common electrode 1, which is formed on a first surface of the semiconductor substrate; a semiconductor layer 2, which is formed on the other surface of the semiconductor substrate, and has a plural number of light emitting portions 7 within an inside thereof; a plural number of anode electrodes 3 of a second conductivity type, which are formed above the plural number of light emitting portions, respectively; and a supporting portion 25, which is provided outside a region of forming the light emitting portions, wherein on one surface of the sub-mount is connected an electrode 3 of the semiconductor laser element array through a solder 4, and that solder 4 is formed to cover a supporting portion and an electrode neighboring thereto, and further on the electrode 3 is formed a groove portion 9 between the supporting portion 25 neighboring and the light emitting portions 7.
Public/Granted literature
- US20100254421A1 MULTI-BEAM SEMICONDUCTOR LASER DEVICE Public/Granted day:2010-10-07
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