Invention Grant
- Patent Title: High efficiency solid-state light source and methods of use and manufacture
- Patent Title (中): 高效率固态光源及其使用和制造方法
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Application No.: US13466337Application Date: 2012-05-08
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Publication No.: US08496356B2Publication Date: 2013-07-30
- Inventor: Mark D. Owen , Tom McNeil , Francois Vlach
- Applicant: Mark D. Owen , Tom McNeil , Francois Vlach
- Applicant Address: US OR Hillsboro
- Assignee: Phoseon Technology, Inc.
- Current Assignee: Phoseon Technology, Inc.
- Current Assignee Address: US OR Hillsboro
- Agency: Alleman Hall McCoy Russell & Tuttle LLP
- Main IPC: F21V29/00
- IPC: F21V29/00

Abstract:
A high-intensity light source is formed by a micro array of a semiconductor light source such as a LEDs, laser diodes, or VCSEL placed densely on a liquid or gas cooled thermally conductive substrate. The semiconductor devices are typically attached by a joining process to electrically conductive patterns on the substrate, and driven by a microprocessor controlled power supply. An optic element is placed over the micro array to achieve improved directionality, intensity, and/or spectral purity of the output beam. The light module may be used for such processes as, for example, fluorescence, inspection and measurement, photopolymerzation, ionization, sterilization, debris removal, and other photochemical processes.
Public/Granted literature
- US20120281408A1 HIGH EFFICIENCY SOLID-STATE LIGHT SOURCE AND METHODS OF USE AND MANUFACTURE Public/Granted day:2012-11-08
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