Invention Grant
- Patent Title: Field-aided preferential deposition of precursors
- Patent Title (中): 现场辅助优先沉积前体
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Application No.: US12383588Application Date: 2009-03-24
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Publication No.: US08496999B2Publication Date: 2013-07-30
- Inventor: Neil Dasgupta , Friedrich B. Prinz , Timothy P. Holme , Stephen Walch , Wonyoung Lee , James F. Mack
- Applicant: Neil Dasgupta , Friedrich B. Prinz , Timothy P. Holme , Stephen Walch , Wonyoung Lee , James F. Mack
- Applicant Address: US CA Palo Alto JP Tokyo
- Assignee: The Board of Trustees of the Leland Stanford Junior University,Honda Motor Co., Ltd
- Current Assignee: The Board of Trustees of the Leland Stanford Junior University,Honda Motor Co., Ltd
- Current Assignee Address: US CA Palo Alto JP Tokyo
- Agency: Lumen Patent Firm
- Main IPC: C23C16/02
- IPC: C23C16/02

Abstract:
Area selective atomic layer deposition is provided by a method including the following steps. First, a substrate is provided. Second, a tip of a scanning probe microscope (SPM) is disposed in proximity to the surface of the substrate. An electrical potential is then established between the tip and the surface that cause one or more localized electrical effects in proximity to the tip. Deposition reactants for atomic layer deposition (ALD) are provided, and deposition occurs in a pattern defined by the localized electrical effects because of locally enhanced ALD reaction rates.
Public/Granted literature
- US20090258157A1 Field-aided preferential deposition of precursors Public/Granted day:2009-10-15
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