Invention Grant
- Patent Title: Method for defect isolation of thin-film solar cell
- Patent Title (中): 薄膜太阳能电池的缺陷隔离方法
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Application No.: US12569024Application Date: 2009-09-29
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Publication No.: US08497150B2Publication Date: 2013-07-30
- Inventor: Yung-Yuan Chang , Hui-Chu Lin
- Applicant: Yung-Yuan Chang , Hui-Chu Lin
- Applicant Address: TW Taichung County
- Assignee: Nexpower Technology Corp.
- Current Assignee: Nexpower Technology Corp.
- Current Assignee Address: TW Taichung County
- Agency: Sinorica, LLC
- Agent Ming Chow
- Priority: TW97138513A 20081007
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
This invention discloses a defect isolation method for thin-film solar cell having at least a defect therein. The thin-film solar cell comprises a substrate, a front electrode layer, an absorber layer and a back electrode layer stacked in such a sequence. The defect isolation method includes the steps of: detecting at least a defect formed in thin-film solar cell and acquiring the positions of the defects, and applying a laser light to scribe the outer circumference of the defects according to the positions of the defects so as to form at least an isolation groove having a closed-curve configuration.
Public/Granted literature
- US20100087025A1 METHOD FOR DEFECT ISOLATION OF THIN-FILM SOLAR CELL Public/Granted day:2010-04-08
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