Invention Grant
- Patent Title: Semiconductor device and manufacturing method of the same
- Patent Title (中): 半导体器件及其制造方法相同
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Application No.: US13198986Application Date: 2011-08-05
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Publication No.: US08497156B2Publication Date: 2013-07-30
- Inventor: Susumu Moriya
- Applicant: Susumu Moriya
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L23/552
Abstract:
A semiconductor device includes a wiring board, a semiconductor element mounted on the wiring board, a sealing resin configured to cover the semiconductor element, a ground electrode having an end connected to a wiring layer of the wiring board and an exposing part exposed at a surface of the sealing resin, and a shielding member configured to cover the sealing resin and be connected to the ground electrode.
Public/Granted literature
- US20110294261A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME Public/Granted day:2011-12-01
Information query
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