Invention Grant
US08497172B2 Method of manufacturing a read-only memory device with contacts formed therein
有权
制造其中形成有触点的只读存储器件的方法
- Patent Title: Method of manufacturing a read-only memory device with contacts formed therein
- Patent Title (中): 制造其中形成有触点的只读存储器件的方法
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Application No.: US13549525Application Date: 2012-07-16
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Publication No.: US08497172B2Publication Date: 2013-07-30
- Inventor: Ching-Hsiang Hsu , Ching-Sung Yang , Shih-Jye Shen
- Applicant: Ching-Hsiang Hsu , Ching-Sung Yang , Shih-Jye Shen
- Applicant Address: TW Hsinchu Science Park, Hsin-Chu
- Assignee: eMemory Technology Inc.
- Current Assignee: eMemory Technology Inc.
- Current Assignee Address: TW Hsinchu Science Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A mask-defined read-only memory array is formed on a substrate, and includes a first ROM bit and a second ROM bit of opposite polarities. The first ROM bit has a first MOS transistor and a first block layer formed over a first region of the substrate. A second source/drain region of the first MOS transistor and a first diffusion region are formed in a first region of the substrate on opposite sides of the first block layer. The second ROM bit includes a second MOS transistor.
Public/Granted literature
- US20120276700A1 READ-ONLY MEMORY AND METHOD OF MANUFACTURE THEREOF Public/Granted day:2012-11-01
Information query
IPC分类:
