Method of fabricating FinFET devices

Invention Grant

US08497175B2 Method of fabricating FinFET devices 有权

Title translation: FinFET器件的制造方法

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Patent Title: Method of fabricating FinFET devices
Patent Title (中): FinFET器件的制造方法
Application No.: US12766055

Application Date: 2010-04-23
Publication No.: US08497175B2

Publication Date: 2013-07-30
Inventor: Jae-Rok Kahng , Makoto Yoshida , Se-Myeong Jang
Applicant: Jae-Rok Kahng , Makoto Yoshida , Se-Myeong Jang
Applicant Address: KR Suwon-si
Assignee: Samsung Electronics Co., Ltd
Current Assignee: Samsung Electronics Co., Ltd
Current Assignee Address: KR Suwon-si
Agency: Stanzione & Kim, LLP
Priority: KR10-2006-0031489 20060406
Main IPC: H01L21/8234
IPC: H01L21/8234

Abstract:

A semiconductor device is fabricating using a photoresist mask pattern, and selectively removing portions of a liner nitride layer in a cell region and a peripheral circuit region. A modified FinFET is formed to reduce the influence of signals transmitted by adjacent gate lines in a cell region. A double FinFET and a substantially planar MOSFET are formed in a core region and in a peripheral region, respectively, concurrently with the formation of the modified FinFET.

Abstract(Chinese):

使用光致抗蚀剂掩模图案制造半导体器件，并且选择性地去除单元区域和外围电路区域中的衬里氮化物层的部分。形成改进的FinFET以减小由相邻栅极线在单元区域中传输的信号的影响。在形成改进的FinFET的同时，在芯区域和周边区域分别形成双FinFET和基本上平面的MOSFET。

Public/Granted literature

US20100200933A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2010-08-12

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺