Invention Grant
- Patent Title: Semiconductor devices and methods for forming patterned radiation blocking on a semiconductor device
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Application No.: US13113638Application Date: 2011-05-23
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Publication No.: US08497186B2Publication Date: 2013-07-30
- Inventor: Swarnal Borthakur , Marc Sulfridge
- Applicant: Swarnal Borthakur , Marc Sulfridge
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Several embodiments for semiconductor devices and methods for forming semiconductor devices are disclosed herein. One embodiment is directed to a method for manufacturing a microelectronic imager having a die including an image sensor, an integrated circuit electrically coupled to the image sensor, and electrical connectors electrically coupled to the integrated circuit. The method can comprise covering the electrical connectors with a radiation blocking layer and forming apertures aligned with the electrical connectors through a layer of photo-resist on the radiation blocking layer. The radiation blocking layer is not photoreactive such that it cannot be patterned using radiation. The method further includes etching openings in the radiation blocking layer through the apertures of the photo-resist layer.
Public/Granted literature
- US20110221023A1 SEMICONDUCTOR DEVICES AND METHODS FOR FORMING PATTERNED RADIATION BLOCKING ON A SEMICONDUCTOR DEVICE Public/Granted day:2011-09-15
Information query
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