Invention Grant
- Patent Title: Processing method for wafer
- Patent Title (中): 晶圆加工方法
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Application No.: US13541191Application Date: 2012-07-03
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Publication No.: US08497189B1Publication Date: 2013-07-30
- Inventor: Hitoshi Hoshino
- Applicant: Hitoshi Hoshino
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greer, Burns & Crain, Ltd.
- Priority: JP2012-11925 20120124
- Main IPC: H01L21/46
- IPC: H01L21/46

Abstract:
A wafer has, on a front face thereof, a device region in which a device is formed in regions partitioned by a plurality of scheduled division lines. An outer peripheral region surrounds the device region. A reflecting film of a predetermined width is formed from the outermost periphery of the wafer on a rear face of the wafer corresponding to the outer peripheral region. The front face side of the wafer is held in a chuck table, and a focal point of a pulsed laser beam of a wavelength having permeability through the wafer is positioned in the inside of the wafer corresponding to the scheduled division lines. The pulsed laser beam is irradiated from the rear face side of the wafer to form modified layers individually serving as a start point of division along the scheduled division lines in the inside of the wafer.
Public/Granted literature
- US20130189806A1 PROCESSING METHOD FOR WAFER Public/Granted day:2013-07-25
Information query
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