Invention Grant
- Patent Title: Shallow trench isolation chemical mechanical planarization
- Patent Title (中): 浅沟隔离化学机械平面化
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Application No.: US13012142Application Date: 2011-01-24
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Publication No.: US08497210B2Publication Date: 2013-07-30
- Inventor: Leslie Charns , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
- Applicant: Leslie Charns , Jason E. Cummings , Lukasz J. Hupka , Dinesh R. Koli , Tomohisa Konno , Mahadevaiyer Krishnan , Michael F. Lofaro , Jakub W. Nalaskowski , Masahiro Noda , Dinesh K. Penigalapati , Tatsuya Yamanaka
- Applicant Address: US NY Armonk JP Tokyo
- Assignee: International Business Machines Corporation,JRS Corporation
- Current Assignee: International Business Machines Corporation,JRS Corporation
- Current Assignee Address: US NY Armonk JP Tokyo
- Agency: Tutunjian & Bitetto, P.C.
- Agent Catherine Ivers
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A polishing method includes polishing, in a first polish, a wafer to remove overburden and planarize a top layer leaving a portion remaining on an underlying layer. A second polishing step includes two phases. In a first phase, the top layer is removed and the underlying layer is exposed, with a top layer to underlying layer selectivity of between about 1:1 to about 2:1 to provide a planar topography. In a second phase, residual portions of the top layer are removed from a top of the underlying layer to ensure complete exposure of an underlying layer surface.
Public/Granted literature
- US20120083122A1 Shallow Trench Isolation Chemical Mechanical Planarization Public/Granted day:2012-04-05
Information query
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