Invention Grant
- Patent Title: Film forming apparatus and film-forming method
- Patent Title (中): 成膜装置及成膜方法
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Application No.: US13151081Application Date: 2011-06-01
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Publication No.: US08497217B2Publication Date: 2013-07-30
- Inventor: Takahiro Ito , Kenji Nakashima
- Applicant: Takahiro Ito , Kenji Nakashima
- Applicant Address: JP Aichi-ken
- Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee: Toyota Jidosha Kabushiki Kaisha
- Current Assignee Address: JP Aichi-ken
- Agency: Sughrue Mion, PLLC
- Priority: JP2008-307492 20081202
- Main IPC: H01L21/205
- IPC: H01L21/205

Abstract:
A film forming apparatus and a film forming method for suppressing a drop in the film forming speed caused by-product gas are provided. A film forming apparatus for forming a film on a wafer includes a chamber in which the wafer is located; a gas introducing member configured to introduce raw material gas into the chamber, in which the raw material gas turning into by-product gas and a substance which adheres to the surface of the wafer by reacting at a surface of the wafer; and a reverse reaction member configured to generate the raw material gas by causing the by-product gas to react in the chamber.
Public/Granted literature
- US20110230055A1 FILM FORMING APPARATUS AND FILM-FORMING METHOD Public/Granted day:2011-09-22
Information query
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