Invention Grant
- Patent Title: Lift-off structure for substrate of a photoelectric device and method thereof
- Patent Title (中): 光电器件基板的剥离结构及其方法
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Application No.: US13236859Application Date: 2011-09-20
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Publication No.: US08497421B2Publication Date: 2013-07-30
- Inventor: Yu-Li Tsai , Chih-Hung Wu , Jei-Li Ho
- Applicant: Yu-Li Tsai , Chih-Hung Wu , Jei-Li Ho
- Applicant Address: TW Taoyuan County
- Assignee: Institute of Nuclear Energy Research Atomic Energy Council, Executive Yuan
- Current Assignee: Institute of Nuclear Energy Research Atomic Energy Council, Executive Yuan
- Current Assignee Address: TW Taoyuan County
- Agency: WPAT, PC
- Agent Justin King
- Priority: TW100130742A 20110826
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
A lift-off structure for substrate of a photoelectric device and method thereof, which making it possible to enable an etching solution to flow through not only external etch channel but also internal etch channel to etch a sacrificial layer in order to increase the overall etching speed and decrease the overall time of lifting a substrate off.
Public/Granted literature
- US20130048058A1 LIFT-OFF STRUCTURE FOR SUBSTRATE OF A PHOTOELECTRIC DEVICE AND METHOD THEREOF Public/Granted day:2013-02-28
Information query
IPC分类:
