Invention Grant
- Patent Title: III-V nitride semiconductor device comprising a diamond layer
- Patent Title (中): III-V族氮化物半导体器件包括金刚石层
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Application No.: US12919939Application Date: 2009-02-26
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Publication No.: US08497513B2Publication Date: 2013-07-30
- Inventor: Erhard Kohn , Michele Dipalo , Farid Medjdoub
- Applicant: Erhard Kohn , Michele Dipalo , Farid Medjdoub
- Applicant Address: DE
- Assignee: Universitat Ulm
- Current Assignee: Universitat Ulm
- Current Assignee Address: DE
- Agency: Schwegman Lundberg & Woessner, P.A.
- Priority: EP08003665 20080228
- International Application: PCT/EP2009/001379 WO 20090226
- International Announcement: WO2009/106328 WO 20090903
- Main IPC: H01L29/15
- IPC: H01L29/15
Abstract:
The invention relates to a semiconductor device, in particular to a chemical field effect transistor (ChemFET), a high-electron mobility transistor (HEMT) and an ion-sensitive field effect transistor (ISFET), as well as a method for manufacturing the same. The semiconductor device comprises a structure, the structure comprises a substrate, a first layer comprising GaN and a second layer comprising InAlN, wherein the first and the second layer are arranged parallely to each other on the substrate, and wherein the structure comprises a third layer comprising diamond.
Public/Granted literature
- US20110005942A1 III-V NITRIDE SEMICONDUCTOR DEVICE COMPRISING A DIAMOND LAYER Public/Granted day:2011-01-13
Information query
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