Invention Grant
US08497544B2 Repairing defects in a nonvolatile semiconductor memory module utilizing a heating element
失效
利用加热元件修复非易失性半导体存储器模块中的缺陷
- Patent Title: Repairing defects in a nonvolatile semiconductor memory module utilizing a heating element
- Patent Title (中): 利用加热元件修复非易失性半导体存储器模块中的缺陷
-
Application No.: US13486977Application Date: 2012-06-01
-
Publication No.: US08497544B2Publication Date: 2013-07-30
- Inventor: Gary B. Bronner , Ming Li , Donald R. Mullen , Frederick Ware , Kevin S. Donnelly
- Applicant: Gary B. Bronner , Ming Li , Donald R. Mullen , Frederick Ware , Kevin S. Donnelly
- Applicant Address: US CA Sunnyvale
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Sunnyvale
- Agent Charles Shemwell
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L21/8238
Abstract:
A memory module includes multiple memory devices mounted to a substrate and one or more discrete heating elements disposed in thermal contact with the memory devices. Each of the memory devices includes charge-storing memory cells subject to operation-induced defects that degrade ability of the memory cells to store data. The discrete heating elements, or single discrete heating element, heats the memory devices to a temperature that anneals the defects.
Public/Granted literature
- US20120236668A1 MEMORY MODULE WITH DISCRETE HEATING ELEMENT Public/Granted day:2012-09-20
Information query
IPC分类:
