Invention Grant
US08497548B2 Semiconductor device including a MOS transistor and production method therefor
有权
包括MOS晶体管的半导体器件及其制造方法
- Patent Title: Semiconductor device including a MOS transistor and production method therefor
- Patent Title (中): 包括MOS晶体管的半导体器件及其制造方法
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Application No.: US12768290Application Date: 2010-04-27
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Publication No.: US08497548B2Publication Date: 2013-07-30
- Inventor: Fujio Masuoka , Shintaro Arai
- Applicant: Fujio Masuoka , Shintaro Arai
- Applicant Address: SG Peninsula Plaza
- Assignee: Unisantis Electronics Singapore PTE Ltd.
- Current Assignee: Unisantis Electronics Singapore PTE Ltd.
- Current Assignee Address: SG Peninsula Plaza
- Agency: Brinks Hofer Gilson & Lione
- Priority: JP2009-109126 20090428
- Main IPC: H01L29/78
- IPC: H01L29/78
Abstract:
It is intended to provide a semiconductor device including a MOS transistor, comprising: a semiconductor pillar; a bottom doped region formed in contact with a lower part of the semiconductor pillar; a first gate formed around a sidewall of the semiconductor pillar through a first dielectric film therebetween; and a top doped region formed so as to at least partially overlap a top surface of the semiconductor pillar, wherein the top doped region has a top surface having an area greater than that of the top surface of the semiconductor pillar.
Public/Granted literature
- US20100270611A1 SEMICONDUCTOR DEVICE INCLUDING A MOS TRANSISTOR AND PRODUCTION METHOD THEREFOR Public/Granted day:2010-10-28
Information query
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