Invention Grant
- Patent Title: Semiconductor device and method for its manufacture
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12733753Application Date: 2008-09-15
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Publication No.: US08497563B2Publication Date: 2013-07-30
- Inventor: Ning Qu , Alfred Goerlach
- Applicant: Ning Qu , Alfred Goerlach
- Applicant Address: DE Stuttgart
- Assignee: Robert Bosch GmbH
- Current Assignee: Robert Bosch GmbH
- Current Assignee Address: DE Stuttgart
- Agency: Kenyon & Kenyon LLP
- Priority: DE102007045185 20070921
- International Application: PCT/EP2008/062251 WO 20080915
- International Announcement: WO2009/040265 WO 20090402
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A semiconductor system having a trench MOS barrier Schottky diode, having an integrated substrate PN diode as a clamping element (TMBS-ub-PN), suitable in particular as a Zener diode having a breakdown voltage of approximately 20V for use in a vehicle generator system, the TMBS-sub-PN being made up of a combination of Schottky diode, MOS structure, and substrate PN diode, and the breakdown voltage of substrate PN diode BV_pn being lower than the breakdown voltage of Schottky diode BV_schottky and the breakdown voltage of MOS structure BV_mos.
Public/Granted literature
- US20100237456A1 SEMICONDUCTOR DEVICE AND METHOD FOR ITS MANUFACTURE Public/Granted day:2010-09-23
Information query
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