Invention Grant
- Patent Title: Capacitors including conductive TiOxNx
- Patent Title (中): 电容器包括导电TiOxNy
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Application No.: US13338527Application Date: 2011-12-28
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Publication No.: US08497566B2Publication Date: 2013-07-30
- Inventor: Vishwanath Bhat , Noel Rocklein , F. Daniel Gealy
- Applicant: Vishwanath Bhat , Noel Rocklein , F. Daniel Gealy
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Wells St. John, P.S.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A method of forming a capacitor includes forming a conductive first capacitor electrode material comprising TiN over a substrate. TiN of the TiN-comprising material is oxidized effective to form conductive TiOxNy having resistivity no greater than 1 ohm·cm over the TiN-comprising material where x is greater than 0 and y is from 0 to 1.4. A capacitor dielectric is formed over the conductive TiOxNy. Conductive second capacitor electrode material is formed over the capacitor dielectric. Other aspects and implementations are contemplated, including capacitors independent of method of fabrication.
Public/Granted literature
- US20120098093A1 Capacitors and Methods of Forming Capacitors Public/Granted day:2012-04-26
Information query
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