Invention Grant
US08497567B2 Thin-film capacitor, multilayer wiring board and semiconductor device
有权
薄膜电容器,多层布线板和半导体器件
- Patent Title: Thin-film capacitor, multilayer wiring board and semiconductor device
- Patent Title (中): 薄膜电容器,多层布线板和半导体器件
-
Application No.: US13523301Application Date: 2012-06-14
-
Publication No.: US08497567B2Publication Date: 2013-07-30
- Inventor: Shinji Rokuhara
- Applicant: Shinji Rokuhara
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Dentons US LLP
- Priority: JP2011-139836 20110623
- Main IPC: H01L27/08
- IPC: H01L27/08

Abstract:
A thin-film capacitor with first capacitative elements each having an electrode layer with a first polarity on an upper surface of a dielectric layer and an electrode layer with a second polarity on a lower surface of the dielectric layer; second capacitative elements each having an electrode layer with the second polarity on the upper surface and an electrode layer with the first polarity on the lower surface and arranged around a specific position alternately with the first capacitative elements; a single common connection hole at the specific position connecting all electrode layers with the first polarity of the first and second capacitative elements; and individual connection holes around the common connection hole connecting each electrode layer with the second polarity of the adjacent and second capacitative elements.
Public/Granted literature
- US20120326272A1 THIN-FILM CAPACITOR, MULTILAYER WIRING BOARD AND SEMICONDUCTOR DEVICE Public/Granted day:2012-12-27
Information query
IPC分类: