Invention Grant
- Patent Title: Wafer, fabricating method of the same, and semiconductor substrate
- Patent Title (中): 晶片,其制造方法和半导体衬底
-
Application No.: US13178919Application Date: 2011-07-08
-
Publication No.: US08497570B2Publication Date: 2013-07-30
- Inventor: Sun-Ha Hwang , Young-Soo Park , Sam-Jong Choi , Joon-Young Choi , Tae-Hyoung Koo
- Applicant: Sun-Ha Hwang , Young-Soo Park , Sam-Jong Choi , Joon-Young Choi , Tae-Hyoung Koo
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0086716 20100903
- Main IPC: H01L29/36
- IPC: H01L29/36

Abstract:
A wafer, a fabricating method of the same, and a semiconductor substrate are provided. The wafer includes a first substrate layer formed at a first surface, a second substrate layer formed at a second surface opposite to the first surface, the second substrate layer having a greater oxygen concentration than the first substrate layer, and an oxygen diffusion protecting layer formed between the first substrate layer and the second substrate layer, the oxygen diffusion protecting layer being located closer to the first surface than to the second surface.
Public/Granted literature
- US20120056304A1 Wafer, Fabricating Method Of The Same, And Semiconductor Substrate Public/Granted day:2012-03-08
Information query
IPC分类: