Invention Grant
US08497573B2 High power semiconductor package with conductive clip on multiple transistors
有权
大功率半导体封装,导电夹在多个晶体管上
- Patent Title: High power semiconductor package with conductive clip on multiple transistors
- Patent Title (中): 大功率半导体封装,导电夹在多个晶体管上
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Application No.: US13095247Application Date: 2011-04-27
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Publication No.: US08497573B2Publication Date: 2013-07-30
- Inventor: Eung San Cho , Chuan Cheah
- Applicant: Eung San Cho , Chuan Cheah
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L23/495
- IPC: H01L23/495

Abstract:
In one implementation, a high power semiconductor package is configured as a buck converter including a control transistor, a sync transistor, a driver integrated circuit (IC) for driving the control and sync transistors, and a conductive clip extending from a sync drain on a top surface of the sync transistor to a control source on a top surface of the control transistor. The conductive clip may also connect to substrate pads such as a leadframe pad for current input and output. In this manner, the conductive clip provides an efficient connection between the control source and the sync drain by direct mechanical connection and large surface area conduction, thereby enabling a package with significantly reduced electrical resistance, form factor, complexity, and cost.
Public/Granted literature
- US20120168923A1 High Power Semiconductor Package with Conductive Clip on Multiple Transistors Public/Granted day:2012-07-05
Information query
IPC分类: