Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US13632608Application Date: 2012-10-01
-
Publication No.: US08497576B2Publication Date: 2013-07-30
- Inventor: Seiya Fujii
- Applicant: Elpida Memory, Inc.
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2009-000749 20090106
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
A semiconductor device which has a plurality of semiconductor chips stacked on a substrate. The semiconductor device includes semiconductor chip 2, semiconductor chip 3a stacked on substrate 4 together with semiconductor chip 2, and having a foot print larger than semiconductor chip 2, through electrode 22 extending through semiconductor chip 2 only in a central portion of semiconductor chip 2, through electrode 32 extending through semiconductor chip 3a at a position facing to through electrode 22, and conduction bump 7b arranged between through electrode 22 and through electrode 32, and conductively connecting through electrode 22 with through electrode 32.
Public/Granted literature
- US20130026652A1 SEMICONDUCTOR DEVICE Public/Granted day:2013-01-31
Information query
IPC分类: