Invention Grant
- Patent Title: Nonvolatile semiconductor memory having a word line bent towards a select gate line side
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Application No.: US13427061Application Date: 2012-03-22
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Publication No.: US08497582B2Publication Date: 2013-07-30
- Inventor: Takeshi Kamigaichi , Takeshi Murata , Itaru Kawabata
- Applicant: Takeshi Kamigaichi , Takeshi Murata , Itaru Kawabata
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-176799 20060627; JP2006-354851 20061228
- Main IPC: H01L29/41
- IPC: H01L29/41 ; H01L27/115
Abstract:
A nonvolatile semiconductor memory includes a cell unit having a select gate transistor and a memory cell connected in series, a select gate line connected to the select gate transistor, and a word line connected to the memory cell. One end of the word line is bent to the select gate line side, and a fringe is connected between a bent point and a distal end of the word line.
Public/Granted literature
- US20120176839A1 NONVOLATILE SEMICONDUCTOR MEMORY HAVING A WORD LINE BENT TOWARDS A SELECT GATE LINE SIDE Public/Granted day:2012-07-12
Information query
IPC分类:
