Invention Grant
- Patent Title: Semiconductor device and power source device
- Patent Title (中): 半导体器件和电源器件
-
Application No.: US12980529Application Date: 2010-12-29
-
Publication No.: US08497666B2Publication Date: 2013-07-30
- Inventor: Toshio Nagasawa
- Applicant: Toshio Nagasawa
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2010-005956 20100114
- Main IPC: G05F1/10
- IPC: G05F1/10 ; H02M1/00

Abstract:
A multi-phase power source device capable of easily changing the number of phases is realized. For example, a plurality of drive units POL[1]-POL[4] corresponding to the number of phases are provided, wherein each POL[n] receives a phase input signal PHI[n] serving as a pulse signal, and generates a phase output signal PHO[n] by delaying PHI[n] by a predetermined cycles of a clock signal CLK. PHI[n] and PHO[n] of each POL[n] are coupled in a ring, wherein each POL[n] performs a switching operation with PHI[n] or PHO[n] as a starting point. In this case, each POL[n] charges and discharges a capacitor Cct commonly coupled to each POL[n] with an equal current, and a frequency of CLK is determined based on this charge and discharge rate. That is, if the number of phases increases n times, the frequency of CLK will be automatically controlled to n times.
Public/Granted literature
- US20110169471A1 SEMICONDUCTOR DEVICE AND POWER SOURCE DEVICE Public/Granted day:2011-07-14
Information query
IPC分类: