Invention Grant
- Patent Title: Fast voltage regulators for charge pumps
- Patent Title (中): 快速电压调节器
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Application No.: US13306950Application Date: 2011-11-29
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Publication No.: US08497667B2Publication Date: 2013-07-30
- Inventor: Hieu Van Tran , Sang Thanh Nguyen , Anh Ly , Hung Q. Nguyen , Wingfu Aaron Lau , Nasrin Jaffari , Thuan Trong Vu , Vishal Sarin , Loc B. Hoang
- Applicant: Hieu Van Tran , Sang Thanh Nguyen , Anh Ly , Hung Q. Nguyen , Wingfu Aaron Lau , Nasrin Jaffari , Thuan Trong Vu , Vishal Sarin , Loc B. Hoang
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP (US)
- Main IPC: G05F3/16
- IPC: G05F3/16

Abstract:
A digital multilevel memory system includes a charge pump and a voltage regulator for generating regulated high voltages for various memory operations. The charge pump may include a plurality of boost circuits to boost the output of the charge pump during a fast start up. Afterwards, the boost circuits are disabled to allow the charge pump to generate high voltages without boosting. The boost circuits may be successively enabled to boost the voltage. The boost circuits may be loadless. The voltage regulator may operate in an open loop and may include a resistive divider as a reference voltage for regulating the high voltage from the charge pump. The charge pump may include spread spectrum pump clocking to reduce electromagnetic inference for capacitor or inductor on-chip charge pumping.
Public/Granted literature
- US20120074923A1 Fast Voltage Regulators For Charge Pumps Public/Granted day:2012-03-29
Information query
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