Invention Grant
- Patent Title: Semiconductor device with fault detection function
- Patent Title (中): 具有故障检测功能的半导体器件
-
Application No.: US12227441Application Date: 2007-06-13
-
Publication No.: US08497695B2Publication Date: 2013-07-30
- Inventor: Chiaki Matoba , Kei Kobayashi
- Applicant: Chiaki Matoba , Kei Kobayashi
- Applicant Address: JP Osaka
- Assignee: Sharp Kabushiki Kaisha
- Current Assignee: Sharp Kabushiki Kaisha
- Current Assignee Address: JP Osaka
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2006-188654 20060707; JP2007-103322 20070410
- International Application: PCT/JP2007/061882 WO 20070613
- International Announcement: WO2008/004414 WO 20080110
- Main IPC: G01R31/3187
- IPC: G01R31/3187

Abstract:
A semiconductor device (1) detecting damage to the peripheral part of a chip which could potentially grow into a defect includes: a wire (3) formed along the outer periphery of a semiconductor chip (2d) to detect damage; a detection circuit (4) provided in the semiconductor chip (2) to supply a detection signal to the wire (3) to detect a break in the wire (3); an output terminal (5) for outputting the detection signal having passed through the wire (3); an internal circuit (6) provided in the semiconductor chip (2); an output switching circuit (7) selecting either an output signal of the internal circuit (6) or the detection signal having passed the wire (3) for output to the output terminal (5); a heating element (15a) heating the peripheral part of the chip; a power supply circuit (16) supplying power to the heating element; and a temperature detection/control circuit (17) controlling the heating by the heating element. This configuration enables easy detection of damage to the chip by logic test without additional measurement terminals. The configuration also enables detection of chips which could develop a defect when packaged.
Public/Granted literature
- US20090174426A1 Semiconductor Device with Fault Detection Function Public/Granted day:2009-07-09
Information query
IPC分类: