Invention Grant
- Patent Title: Semiconductor device
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Application No.: US13527678Application Date: 2012-06-20
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Publication No.: US08497720B2Publication Date: 2013-07-30
- Inventor: Kazutoshi Nakamura , Toru Takayama , Yuki Kamata , Akio Nakagawa , Yoshinobu Sano , Toshiyuki Naka
- Applicant: Kazutoshi Nakamura , Toru Takayama , Yuki Kamata , Akio Nakagawa , Yoshinobu Sano , Toshiyuki Naka
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2008-004894 20080111; JP2008-117491 20080428; JP2008-298025 20081121
- Main IPC: H03K3/017
- IPC: H03K3/017

Abstract:
A semiconductor device includes: a voltage-control-type clock generation circuit having a plurality of stages of first delay elements and whose oscillation frequency is controlled according to a control voltage applied to the first delay elements; a delay circuit having a plurality of stages of second delay elements connected serially; and a selection circuit selecting one from pulse signals output by the plurality of stages of respective second delay elements. The first delay elements and the second delay elements have a same structure formed on a same semiconductor substrate, and a delay amount of the second delay elements is adjusted according to the control voltage.
Public/Granted literature
- US20120256607A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-10-11
Information query
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