Invention Grant
- Patent Title: Three-dimensional semiconductor integrated circuit
- Patent Title (中): 三维半导体集成电路
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Application No.: US13223898Application Date: 2011-09-01
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Publication No.: US08497732B2Publication Date: 2013-07-30
- Inventor: Shinichi Yasuda , Keiko Abe , Shinobu Fujita
- Applicant: Shinichi Yasuda , Keiko Abe , Shinobu Fujita
- Applicant Address: JP Minato-ku, Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku, Tokyo
- Agency: Ohlandt, Greeley, Ruggiero & Perle, L.L.P.
- Priority: JP2009-073896 20090325
- Main IPC: H01L25/00
- IPC: H01L25/00

Abstract:
According to one embodiment, a three-dimensional semiconductor integrated circuit includes first, second and third chips which are stacked, and a common conductor which connects the first, second and third chips from one another. The first chip includes a first multi-leveling circuit, the second chip includes a second multi-leveling circuit, and the third chip includes a decoding circuit. The first multi-leveling circuit includes a first inverter to which binary first data is input and which outputs one of first and second potentials and a first capacitor which is connected between an output terminal of the first inverter and the common conductor. The second multi-leveling circuit includes a second inverter to which binary second data is input and which outputs one of third and fourth potentials and a second capacitor which is connected between an output terminal of the second inverter and the common conductor.
Public/Granted literature
- US20110309881A1 THREE-DIMENSIONAL SEMICONDUCTOR INTEGRATED CIRCUIT Public/Granted day:2011-12-22
Information query
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