Invention Grant
US08497751B2 Capacitive micro-switch comprising a charge drain based on oriented nanotubes on the bottom electrode and method of fabrication
有权
电容微型开关包括基于底部电极上的定向纳米管的电荷漏极和制造方法
- Patent Title: Capacitive micro-switch comprising a charge drain based on oriented nanotubes on the bottom electrode and method of fabrication
- Patent Title (中): 电容微型开关包括基于底部电极上的定向纳米管的电荷漏极和制造方法
-
Application No.: US12938088Application Date: 2010-11-02
-
Publication No.: US08497751B2Publication Date: 2013-07-30
- Inventor: Afshin Ziaei , Matthieu Le Baillif
- Applicant: Afshin Ziaei , Matthieu Le Baillif
- Applicant Address: FR Neuilly sur Seine
- Assignee: Thales
- Current Assignee: Thales
- Current Assignee Address: FR Neuilly sur Seine
- Agency: Baker Hostetler LLP
- Priority: FR0905260 20091103
- Main IPC: H01H51/22
- IPC: H01H51/22
Abstract:
The invention relates to an electrostatic actuation micro-switch of capacitor type composed of two plates, the first of which is a flexible membrane and the second of which comprises at least one control electrode, the two plates being separated by a thickness of vacuum or gas and at least one layer of at least one electrical insulating material situated on the control electrode characterized in that it furthermore comprises a charge drain consisting of oriented conducting nanotubes on the surface of the said electrode, the said drain being overlaid with the said layer of electrical insulating material. The subject of the invention is also a method for fabricating the micro-switch according to the invention.
Public/Granted literature
Information query
