Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12801259Application Date: 2010-05-28
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Publication No.: US08497997B2Publication Date: 2013-07-30
- Inventor: Mami Miyasaka
- Applicant: Mami Miyasaka
- Applicant Address: JP Kawasaki, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki, Kanagawa
- Agency: McGinn IP Law Group PLLC
- Priority: JP2009-148386 20090623
- Main IPC: G01B11/14
- IPC: G01B11/14

Abstract:
A semiconductor device includes an alignment mark. A probe beam is scanned on the alignment mark so as to detect a position coordinate of the alignment mark, and the alignment mark comprises a plurality of bar marks which are arranged in a first predetermined interval along a first direction of scanning the detection beam. Each of the plurality of bar marks comprises a plurality of interconnection marks which are arranged along a second direction orthogonal to the first direction, and a first space between adjacent two of the plurality of interconnection marks is shorter than a wavelength of the detection beam within a range of a design constraint.
Public/Granted literature
- US20100321705A1 Semiconductor device and method of manufacturing the same Public/Granted day:2010-12-23
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