Invention Grant
- Patent Title: Magneto-resistive effect element having spacer layer containing gallium oxide, partially oxidized copper
- Patent Title (中): 具有包含氧化镓，部分氧化铜的间隔层的磁阻效应元件
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Application No.: US13049195Application Date: 2011-03-16
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Publication No.: US08498083B2Publication Date: 2013-07-30
- Inventor: Hayato Koike , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
- Applicant: Hayato Koike , Tsutomu Chou , Yoshihiro Tsuchiya , Hironobu Matsuzawa
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Posz Law Group, PLC
- Main IPC: G11B5/39
- IPC: G11B5/39
Abstract:
A magneto-resistive effect (MR) element includes first and second magnetic layers where a relative angle formed by magnetization directions changes in response to an external magnetic field and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The first magnetic layer is positioned closer to a substrate above which the MR element is formed than the second magnetic layer. The spacer layer includes a main spacer layer that is composed of gallium oxide as a primary component and a bottom layer that is positioned between the main spacer layer and the first magnetic layer and that is composed of partially oxidized copper as a primary component.
Public/Granted literature
- US20120237796A1 MAGNETO-RESISTIVE EFFECT ELEMENT HAVING SPACER LAYER CONTAINING GALLIUM OXIDE, PARTIALLY OXIDIZED COPPER Public/Granted day:2012-09-20
Information query
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