Invention Grant
- Patent Title: Thin-film capacitor with internally hollow through holes
- Patent Title (中): 具有内部中空通孔的薄膜电容器
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Application No.: US12956060Application Date: 2010-11-30
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Publication No.: US08498095B2Publication Date: 2013-07-30
- Inventor: Yoshihiko Yano , Yasunobu Oikawa , Kenji Horino , Hitoshi Saita
- Applicant: Yoshihiko Yano , Yasunobu Oikawa , Kenji Horino , Hitoshi Saita
- Applicant Address: JP Tokyo
- Assignee: TDK Corporation
- Current Assignee: TDK Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JPP2009-271987 20091130
- Main IPC: H01G4/005
- IPC: H01G4/005 ; H01G4/20 ; H01G4/33 ; H01G4/012

Abstract:
A thin-film capacitor that is less prone to generation of internal cracking or peeling is provided. In a thin-film capacitor according to the present embodiment, because through holes H are formed in internal electrodes containing Ni as a principal component in a lamination direction, a surface area of at least some of the through holes H is in the range of 0.19 μm2 to 7.0 μm2, and a ratio of a surface area of the through holes H to a surface area of an entire main surface of the internal electrodes is in the range of 0.05% to 5%, peeling or cracking is suppressed from occurring at the boundaries between the internal electrodes and dielectric layers, and as a result, the yield is enhanced.
Public/Granted literature
- US20110128669A1 THIN-FILM CAPACITOR Public/Granted day:2011-06-02
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